5:30 PM - 5:45 PM
[14p-B2-17] Improvement in Noise Characteristics of GaAsSb-based Backward Diodes for Terahertz Receiver Applications
Keywords:detector, tunnel, noise
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAsSb/n-InGaAs heterojunction. Junction resistance was decreased by removing an InAlAs barrier layer from a conventional p+-GaAsSb/i-InAlAs/n-InGaAs structure. Although sensitivity indicated slight decrease, noise equivalent power (NEP) was drastically improved from 303 to 64 pW/âHz at 300 GHz.
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