Fabrication and evaluation of InP-Si MOS optical modulator

Tatsuro Hiraki; Takuma Aihara; Koichi Hasebe; Koji Takeda; Takuro Fujii; Tai Tsuchizawa; Takaaki Kakitsuka; Tsuyoshi Yamamoto; Shinji Matsuo

Presentation information

Oral presentation

3 Optics and Photonics » 3.15 Silicon photonics

[14p-B4-1~15] 3.15 Silicon photonics

Wed. Sep 14, 2016 1:45 PM - 6:00 PM B4 (Exhibition Hall)

Yuya Shoji(Titech), Tsuyoshi Horikawa(AIST), Kenji Kintaka(AIST)

1:45 PM - 2:00 PM

[14p-B4-1] Fabrication and evaluation of InP-Si MOS optical modulator

〇Tatsuro Hiraki^1,2, Takuma Aihara¹, Koichi Hasebe^1,2, Koji Takeda^1,2, Takuro Fujii^1,2, Tai Tsuchizawa^1,2, Takaaki Kakitsuka^1,2, Tsuyoshi Yamamoto¹, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.Nanophotonics Center)

Keywords:Optical modulator

We demonstrated the InP-Si MOS optical modulator. Since the peak wavelength of the Fabry–Perot resonance was shifted by applying the bias voltage, we could check the refractive-index change by the acculated carriers.