[14p-C31-1~13] 3.7 Laser processing

△ [14p-C31-9] Formation mechanisms of polarization-dependent periodic nanostructures in β-Ga₂O₃ semiconductor

〇Yuta Nakanishi¹, Yasuhiko Shimotsuma¹, Masaaki Sakakura², Kiyotaka Miura¹ (1.Kyoto Univ., 2.SACI, Kyoto Univ.)

Keywords:semiconductor, periodic nanostructure, femtosecond laser

Recently, we have successfully observed self-assembled periodic nanostructures inside indirect bandgap semiconductor; Si and GaP, by the femtosecond double pulse irradiation. In this study, to elucidate the formation mechanism, we irradiated the femtosecond laser to β-Ga₂O₃ crystals (indirect bandgap;Eg ~ 4.8 eV) and observed the modified region.