[14p-D61-1~20] 11.4 Analog applications and their related technologies

[14p-D61-2] High-Tc rf-SQUID on MgO substrate for single chip operation

〇Yuji Miyato¹, Emi Saito¹, Hideo Itozaki¹ (1.Osaka Univ.)

Keywords:SQUID, RF

The resonant frequency of a high-Tc rf-SQUID depends on relative permittivity of the substrate. When a MgO substrate, which is generally used in high-frequency superconducting devices, is applied to the rf-SQUID, the resonant frequency is much higher than that of the SrTiO₃ (STO) substrate employed in our conventional rf-SQUIDs. In this study, an rf-SQUID was newly designed with the slit length about 20 times longer than the conventional one in order to reduce the resonant frequency within controllable frequency range of the operating electronics. As the result, the resonant frequency of the rf-SQUID fabricated on the MgO substrate became almost as low as the conventional designed one on STO substrate. Then, we succeeded in single chip operation of the newly designed rf-SQUID on the MgO substrate.