18:45 〜 19:00
▲ [14p-D62-20] Resistive switching studies of a single silver nanowire junction by multiple-probe AFM
キーワード：Nanowire, Resistive switching, Conductive filament
Resistive switching, which exhibits two stable resistance state by applied electrical voltage or current, have been extensively studied for use in memory devices. Recently, memristive-like electrical behaviors in Ag nanowires network have been reported. However, the resistive switching in a single Ag nanowire junction, which is the basic unit of networks, has not been well studied.
Herein, the electrical conductivity of a single Ag nanowire junction was measured by multiple-probe atomic force microscope (MP-AFM). We found the resistance switching phenomenon in a single Ag nanowire junctions. This nonlinear conductivity is related to the conductive filament path formed beween two Ag nanowires. Now, we are trying to make this resistance switching more stable and reliable, and then we will study its potential application in nueromorphic field.
Herein, the electrical conductivity of a single Ag nanowire junction was measured by multiple-probe atomic force microscope (MP-AFM). We found the resistance switching phenomenon in a single Ag nanowire junctions. This nonlinear conductivity is related to the conductive filament path formed beween two Ag nanowires. Now, we are trying to make this resistance switching more stable and reliable, and then we will study its potential application in nueromorphic field.