[14p-D62-1~20] 9.2 Nanowires and Nanoparticles

[14p-D62-3] Atomic ordering induced at Au/GaAs(111)B interface

〇Masamitu Takahasi¹, Takuo Sasaki¹ (1.QST)

Keywords:VLS growth, molecular beam epitaxy, X-ray diffraction

In the vapor liquid solid (VLS) growth of semiconductor nanowires, metal droplets work as catalyst. At growth temperatures, the metal catalyst forms liquid alloys with the substrate materials. The knowledge about the atomic structure between the droplets and the substrate is essential for understanding the growth mechanism of the VLS growth. In the present work, surface X-ray diffraction technique was employed to determine the interfacial structure of Au/GaAs(111)B. It was revealed that the atoms in the catalytic alloy are ordered at the interface commensurately with the substrate.