[14p-D62-1~20] 9.2 Nanowires and Nanoparticles

[14p-D62-6] Room-temperature telecom-band InAs/InP microwire laser by bottom-up approach

〇Guoqiang Zhang^1,2, Masato Takiguchi^1,2, Kouta Tateno^1,2, Hideki Gotoh¹ (1.NTT BRL, 2.NTT NPC)

Keywords:semiconductor, nanowire, laser

Telecom-band lasers are extremely important for optical data communication, spectroscopy, and medical diagnosis. Semiconductor nanowires (NWs) or microwires (MWs) offer the possibility of reducing the footprint of devices for 3D integration and enduring large lattice mismatch for breaking the limitation of material combination. Although ultraviolet, visible, and near-infrared NW lasers have been demonstrated, room-temperature telecom-band NW (or MW) lasers have not been realized due to the material issues. In this work, we established the technique to grow InP/InAs MWs with superior optical property and demonstrated the telecom-band MW lasers at room temperature for the first time. We believe that this work opens up new opportunities in optoelectronics and on-chip data communication.