[14p-D62-1~20] 9.2 ナノワイヤ・ナノ粒子

[14p-D62-6] ボトムアップ的手法で作製した通信波長帯室温動作InAs/InPマイクロワイヤレーザ

〇章 国強^1,2、滝口 雅人^1,2、舘野 功太^1,2、後藤 秀樹¹ (1.NTT 物性研、2.NTTﾅﾉﾌｫﾄﾆｸｽｾﾝﾀ)

キーワード：半導体、ナノワイヤ、レーザ

Telecom-band lasers are extremely important for optical data communication, spectroscopy, and medical diagnosis. Semiconductor nanowires (NWs) or microwires (MWs) offer the possibility of reducing the footprint of devices for 3D integration and enduring large lattice mismatch for breaking the limitation of material combination. Although ultraviolet, visible, and near-infrared NW lasers have been demonstrated, room-temperature telecom-band NW (or MW) lasers have not been realized due to the material issues. In this work, we established the technique to grow InP/InAs MWs with superior optical property and demonstrated the telecom-band MW lasers at room temperature for the first time. We believe that this work opens up new opportunities in optoelectronics and on-chip data communication.