[14p-P10-1~25] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[14p-P10-1] Monolayer growth control of ZnO films by a pulse supply of metal source gas

〇Shotaro Ono¹, Taro Saito¹, Yasuhiro Tamayama¹, Kanji Yasui¹ (1.Nagaoka Univ. of Tech.)

Keywords:catalytic reaction, ZnO, pulse gas supply

One monolayer growth control of c-ZnO films was tried by a pulse gas supply of DMZn using a catalytic reaction assisted chemical vapor deposition. The pulse width of DMZn gas supply was set at 4 ms and 8 ms. Growth thickness per pulse of the ZnO films was estimated from the film thickness measured by a mechanical stylus-based surface profilometer and total pulse number during the growth. As a result of the experiment, the growth thickness of the ZnO films was 0.19 nm and 0.36-0.39 nm, the same order of the 1 monolayer thickness of ZnO (0.26nm).