The 77th JSAP Autumn Meeting, 2016

Presentation information

Poster presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

[14p-P10-1~25] Joint Session K "Wide bandgap oxide semiconductor materials and devices"(Poster)

Wed. Sep 14, 2016 1:30 PM - 3:30 PM P10 (Exhibition Hall)

1:30 PM - 3:30 PM

[14p-P10-14] High-Temperature In situ Photoemission Spectroscopy of ZnO Single Crystal Surfaces

Takeo Ohsawa1, Naoki Ohashi1 (1.NIMS)

Keywords:ZnO, Photoemission spectroscopy

Zinc oxide (ZnO) has been used as varistors operated at high temperature. However, there has been few reports on direct observations of electronic structures of ZnO at high temperature. We here report in situ observations of these states by using a high-temperature photoemission spectroscopy.