[14p-P10-1~25] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[14p-P10-24] ITO ohmic electrodes for β-Ga₂O₃

〇Takayoshi Oshima¹, Ryo Wakabayashi², Mai Hattori², Akihiro Hashiguchi¹, Naoto Kawano¹, Kohei Sasaki^3,4, Kakekazu Masui^3,4, Akito Kuramata^3,4, Shigenobu Yamakoshi^3,4, Kohei Yoshimatsu², Akira Ohtomo², Toshiyuki Oishi¹, Makoto Kasu¹ (1.Saga Univ., 2.Titech., 3.Tamura Corp., 4.NCT)

Keywords:Ga2O3, Ohmic electrode, ITO

We report that ITO can be used as high-temperature resistive ohmic electrodes for β-Ga₂O₃.