[14p-P10-1~25] Joint Session K "Wide bandgap oxide semiconductor materials and devices"（Poster）

[14p-P10-5] Optical emission property of the non-polar ZnO films deposited by a catalytic reaction assisted CVD method

〇Munenori Ikeda¹, Ryouichi Tajima¹, Yuki Adachi¹, Ariyuki Kato¹, Yasuhiro Tamayma¹, Kanji Yasui¹ (1.Nagaoka Univ. Technol.)

Keywords:catalytic reaction, a-plane ZnO, polarization property

Non-polar ZnO films were grown on r-plane sapphire substrates through a reaction between dimethylzinc and high-temperature H₂O produced by a Pt-catalyzed H₂ and O₂ reaction. The deposition temperature was set at 500^oC, 600^oC, 650^oC and 700^oC. The ZnO films exhibited linearly polarized emission. The lower the growth temperature became, the stronger the relative intensity between strong emission intensity and weak intensity became. Surface morphology of the ZnO films on the r-plane sapphire substrates showed anisotropic structure with nanostripe arrays. The polarization characteristic may be derived from the crystal domain structure.