[14p-P21-1~27] 13.10 Compound solar cells

[14p-P21-25] Coupling properties between III-V/Si sub cells in InGaP/GaAs/Si triple-junction cells

〇Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka City Univ.)

Keywords:multijunciton solar cell, surface activated bonding, coupling

We fabricated InGaP/GaAs/Si triple-junction cells with extra electrical contacts to bonding layers by surface-activated bonding at room temperature. By simultaneously measuring current-voltage characteristics of III-V sub cells and currents in Si sub cells, we observed non-linear luminescence coupling between III-V and Si sub cells. The coupling coefficient between sub cells, or the ratio of changes in the sub cell currents, was estimated.