[14p-P22-1~15] CS.4 9.4&16.2 Code-sharing session

[14p-P22-13] Transient heat transfer of Si-based single Peltier devices for cooling power semiconductors

〇Yutaka Furubayashi¹, Takafumi Tanehira², Kei Yonemori², Norihide Seo², Shin-Ichiro Kuroki¹ (1.RNBS Hiroshima Univ, 2.Mazda Motor Corp.)

Keywords:Power devices, Cooling, Peltier devices

Typically a generated heat from a silicon-carbide(SiC)-based power device in an inverter of a motorcar is a few hundred Wcm-2 during a maximum operation.
Thermal analysis of Peltier effect of Si-based single Peltier devices revealed that these single n+Si devices had Seebeck coefficient of 710 μVK-1 which was approximately the same as that of previous reports. Additionally, we observed for the first time the decrease of the temperature on the heating side during an initial operation of the Si Peltier device for 0.2 sec.