[14p-P3-1~3] 6.1 Ferroelectric thin films

[14p-P3-3] Crystal orientation of Bi_4-xLa_xTi₃O₁₂ thin films formed on Si(100) substrates and electrical characteristics of the MFS structures

〇Atsushi Kohno¹, Takayuki Tajiri¹ (1.Fukuoka Univ.)

Keywords:ferroelectric thin film, Bi-layer structured ferroelectrics, MFS type memory

Highly-preferential crystal orientation arose in Bi_4-xLa_xTi₃O₁₂ (BLT) thin films formed on Si(100) substrates with chemical solution deposition method. The BLT thickness and crystal phase could be controlled with mixture ratio of the chemicals in the precursor solution. We investigated the thickness dependence of crystal orientation and film structure with X-ray reflectivity and diffraction methods. In this presentation the relation between the electrical characteristics of MFS structures and the crystal orientation of BLT films on Si will be discussed.