[14p-P4-1~5] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[14p-P4-4] Simulation of Integration for Self-bias Channel Diode With Super Junction Structure

〇(M2)Hirotaka Tsushima¹, Tsugutomo Kudoh², Fumihiko Sugawara¹ (1.Tohoku Gakuin Univ., 2.Kanagawa Inst. of Tech.)

Keywords:Self-bias Channel Diode, Super Junction, Integration

The authors have proposed a self-bias channel diode (SBCD) with a super junction structure. The lower on-state voltage by the integration of the cell structure, the breakdown voltage is reduced. Therefore, the structure for reducing on-state voltage while maintaining the breakdown voltage was verified by simulation.