2016年 第77回応用物理学会秋季学術講演会

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13 半導体 » 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

[14p-P5-1~13] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

2016年9月14日(水) 13:30 〜 15:30 P5 (展示ホール)

13:30 〜 15:30

[14p-P5-13] Electrodeposition of Crystalline-silicon on Metal-substrate from SiO2 in Molten-salt

Muhammad Monirul Islam1、Takeaki Sakurai1、Katsuhiro Akimoto1 (1.Tsukuba Univ.)

キーワード:silicon, electrodeposition, photovoltaic

Most of the commercial solar cells are based on silicon (Si) which is most abundant solar energy material in form of silicates and silica (SiO2). Thus, production cost of Si has significant impact on the application of solar electricity for the general people. For the fabrication of solar cell Si with 99.9999% (6N) is necessary which is called solar-grade silicon (SOG-Si) However, there remain several challenges in the current production of Si using carbothermic reduction which is associated with huge energy consumption and carbon-di-oxide emission.
We aim to study formation of Si layer through reduction of SiO2 using alternative method comparing to carbothermic process. We aim for the electrodeposition of SOG-Si films on low-cost substrate from of SiO2-powder through electrochemical-reduction.