[14p-P8-1~5] 15.2 II-VI and related compounds

[14p-P8-1] Growth of ZnS Films on GaP Substrates by Mist Chemical Vapor Deposition

Yasuyuki Asano¹, 〇Kazuyuki Uno¹, Ichiro Tanaka¹ (1.Systems Eng., Wakayama Univ.)

Keywords:zinc sulfide, epitaxial growth, mist chemical vapor deposition

We have studied the growth of zinc sulfide (ZnS) by mist chemical vapor deposition method, which uses ultrasonically atomized aquaous solutions as sources, and reported its growth mechanisms and optical properties, systematically. In this study, we used GaP(100) single crystal substrates for the growth of ZnS. The lattice mismatch between GaP and ZnS is about 0.7%.
While ZnS films grown on SiO₂/Si substrates has (111) orientation with the roughness of about 500nm, ZnS films grown on GaP substrates has (100) orientation with the smaller roughness of about 200nm.