[14p-P9-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[14p-P9-13] Development Processes of the Heavy Ion Induced Charge Collection in SiC-MOSFETs

〇(M1)Shuhei Takano^1,2, Takahiro Makino³, Sinsuke Harada², Kazutoshi Kojima², Yasuto Hijikata¹, Takeshi Ohshima³ (1.Saitama Univ., 2.AIST, 3.QST)

Keywords:Silicon carbide, Single Event Effect

In this study, as a step of mechanism elucidation of Single Event Effect, for SiC-MOSFETs, we tried to explorer the collecting process of charges inside devices induced by heavy ion irradiation.
From the histogram of collected charges at various applied drain-source voltages, two peaks were observed, the position of the peaks shifted to positive collected charge side with increasing applied voltage, and an aspect of spreading width of the peaks was observed.