[14p-P9-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[14p-P9-2] Electrical Characterization of Free-Standing 3C-SiC(111) Substrates Grown by Gas-Source Molecular Beam Epitaxy

〇Yoshitaka Nakano¹, Hidetoshi Asamura², Sumito Oouchi², Mitsuhisa Narukawa², Toru Inagaki², Keisuke Kawamura² (1.Chubu Univ., 2.Air Water Inc.)

Keywords:3C-SiC, free-standing substrates, deep-level defects

We have investigated deep-level defects in free-standing 3C-SiC(111) substrates grown by gas-source molecular beam epitaxy, employing capacitance-voltage, steady-state photo-capacitance spectroscopy, and thermal admittance spectroscopy techniques.