[14p-P9-1~18] 15.6 Group IV Compound Semiconductors (SiC)

[14p-P9-4] Interface Characterization of SiC Schottky Junctions with Laminated Mo/C Electrodes by XPS Measurement

〇(M2)Tomoyuki Suzuki¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹, Hiroshi Nohira² (1.Tokyo Tech., 2.Tokyo City Univ.)

Keywords:Silicon carbide, X-ray Photoelectron Spectroscopy, Schottky diode