Increase of Growth Rate of GaN Crystals in the Na-flux Point seed technique

Masatoshi Hayashi; Imanishi Masayuki; Yamada Takumi; Matsuo Daisuke; Murakami Kosuke; Maruyama Mihoko; Imade Mamoru; Yoshimura Masashi; Mori Yusuke

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[15a-A21-1~11] 15.4 III-V-group nitride crystals

Thu. Sep 15, 2016 9:00 AM - 12:00 PM A21 (Main Hall A)

Toru Akiyama(Mie Univ.), Yoshihiro Kangawa(Kyushu Univ.)

9:30 AM - 9:45 AM

△ [15a-A21-3] Increase of Growth Rate of GaN Crystals in the Na-flux Point seed technique

〇Masatoshi Hayashi¹, Imanishi Masayuki¹, Yamada Takumi¹, Matsuo Daisuke¹, Murakami Kosuke¹, Maruyama Mihoko¹, Imade Mamoru¹, Yoshimura Masashi¹, Mori Yusuke¹ (1.Osaka Univ.)

Keywords:Gallium Nitride, Na-flux

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