[15a-A22-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-A22-10] Electric Characteristics of Sputter-Deposition p-NiO Films

〇Kohei Sasaki^1,2, Masataka Higashiwaki², Akito Kuramata¹, Shigenobu Yamakoshi¹ (1.Tamura Corp., 2.NICT)

Keywords:NiO, p-type, sputter

NiO is the p-type oxide semiconductor. We investigated the deposition temperature dependence of resistivity or contact resistivity of sputter-deposited NiO films. Resistivity decreased with decreasing deposition temperature. Other hand, contact resistivity increased with decreasing that. NiO films can be fabricated with low resistivity and contact resistivity by set that at 200-300 ºC.