[15a-A25-1~9] 17.1 Carbon nanotubes & other nanocarbon materials

▲ [15a-A25-4] High-yield fabrication of n-type carbon nanotube thin-film transistors on flexible plastic film

〇(M1)FuWen Tan¹, Jun Hirotani¹, Tomohiro Yasunishi¹, Shigeru Kishimoto¹, Yutaka Ohno^1,2 (1.Nagoya Univ., 2.Inst. of Materials and Systems for Sustainability for Nagoya Univ.)

Keywords:Carbon nanotube thin film transistor, n-type, High yield fabrication

Carbon nanotube thin-film transistors (CNT TFTs) are envisioned to be active devices for various flexible/stretchable devices because CNTs exhibit excellent mechanical and electrical properties. As-fabricated CNT TFTs normally show p-type characteristics, thus n-type TFTs are necessary to construct complementary metal-oxide-semiconductor-based devices. We have fabricated more than 800 air-stable, n-type CNT TFTs on a flexible plastic substrate with high yield by chemical doping technique. We confirmed 99.5 % of devices changed from p- to n-type characteristics with small hysteresis.