[15a-A33-1~10] 17.2 Graphene

[15a-A33-7] Enhanced Etching of Ge Surfaces in Water Assisted by Single Flakes of Graphene Catalysts

〇Kazuki Nakade¹, Mori Daichi¹, Shinsuke Sato¹, Shaoxian Li¹, Kentaro Kawai¹, Mizuho Morita¹, Kenta Arima¹ (1.Osaka Univ.)

Keywords:graphene, germanium, etching

Single flakes of graphene oxide(GO) and chemically-reduced GO are deposited on Ge surfaces. Then, AFM is carried out on etch pits on Ge loaded with graphene materials are investigated after dipping into saturated-O2-water to evaluate quantitatively. GO get more active as catalyst for oxygen reduction reaction as it is reduced, and, at the same time, we think that its ability to etch Ge surfaces become higher. These results will lead the new process to create the semiconductor surface using graphene catalysts.