[15a-B1-1~13] 13.8 Compound and power electron devices and process technology

△ [15a-B1-9] Vertical structure p⁺⁺-n junction diodes using thin p⁺⁺-GaN layers

〇Hirofumi Tsuge¹, Fumimasa Horikiri², Yoshinobu Narita², Naoki Kaneda³, Tohru Nakamura¹, Tomoyoshi Mishima¹ (1.Hosei university, 2.SCIOCS, 3.Quantum Spread)

Keywords:Gallium Nitride, p-n junction diode

p⁺⁺-n junction diodes using p⁺⁺ layers and n-GaN layers have been evaluated. Forward I-V characteristics with the p⁺⁺ layer of 30 nm showed on-voltage V_f of ~3.1 V as usual p-n junction diodes. V_f became lower with thinner p⁺⁺ layer by partial depletion of the layer. The thin p⁺⁺ layers were confirmed in their functions of p type layers and ohmic contact layers.