[15a-B11-1~9] 12.4 Organic light-emitting devices and organic transistors

[15a-B11-2] n-type operation of organic-inorganic perovskite transistors

〇Toshinori Matsushima^1,2, Atula Sandanayaka^1,2, Chuanjiang Qin^1,2, Takashi Fuhihara³, Chihaya Adachi^1,2,4 (1.OPERA, Kyushu Univ., 2.JST ERATO, 3.ISIT, 4.WPI-I2CNER)

Keywords:organic-inorganic perovskite, transistor, n-type operation

The source of no observation of n-type properties in perovskite transistors is considered to be chemical reaction between low-work-function metal and perovskite and a very large electron injection barrier at a metal/perovskite interface. To suppress chemical reaction and inject electrons into perovskite, we inserted C60 between source/drain electrodes and perovskite. The n-type operation with an electron mobility of 1.7 cm² V^-1 s^-1 was realized in perovskite transistors with C60 electron injection layers.