[15a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-C302-2] Time dependence of the meniscus height for solution growth of SiC crystal by X-ray transmission method

〇Takenobu Sakai¹, Motohisa Kado², Hironori Daikoku², Shunta Harada³, Toru Ujihara³ (1.Nagoya Univ. Inst. of Innov. for Futur. Soc., 2.Toyota Motor Co., 3.Nagoya Univ. Inst. of Mat. and Sys. for Sust.)

Keywords:solution growth of SiC crystal, In-situ observation

Top seeded solution growth is greater technique der the possibility of realizing a high-quality SiC bulk crystal. However, it is difficult to know such as the state of contact between the solution and the seed crystal, because of the crystal growth at high-temperature range. We need to know the physical state of the field of crystal growth. In this paper, we review our developed in-situ observation techniques and the study about the observation of the time-dependency of the meniscus height.Then, during the growth of 24 hours, the meniscus height was found to increase 3.5~5mm.