Crystalloraphically Rotated Growth of 3C-Si(111) thin Film on Si(110)

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 15, 2016 9:00 AM - 12:15 PM C302 (Nikko Houou)

9:45 AM - 10:00 AM

〇Kensuke Takahashi¹, Tai Yokoyama¹, Sergey Filimonov², Hiroyuki Nagasawa¹, Hirokazu Fukidome¹, Maki Suemitsu¹ (1.Tohoku Univ., 2.Tomsk Univ.)

Keywords:SiC