[15a-C302-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-C302-5] Structural stability of 4H-SiC m plane surfaces

Atsushi Shioji¹, Anton Visikovskiy¹, Takashi Kajiwara¹, 〇Satoru Tanaka¹ (1.Kyushu Univ.)

Keywords:SiC MOSFET, m-plane surface

We discuss the surface structure and stability of m-plane of 4H-SiC, which is recently used as a chanel in Trench-type MOSFET. Stripe-shaped morphology along (0001) was observed on m-plane surfaces after H₂ gas etching. This is induced by th formation of (1-101) and (1-10-1) facets, which are realtively stable in energy. We will discuss the formation mechanisms and energetic stability of the structure by means of DFT calculations.