[15a-C41-1~6] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▼ [15a-C41-2] Realization of high quality epitaxial current-perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer

〇(DC)Jiamin CHEN^1,2, Jun Liu², Yuya Sakuraba², Hiroaki Sukegawa², Songtian Li², Kazuhiro Hono^2,1 (1.Tsukuba Univ., 2.NIMS)

Keywords:CPP-GMR, epitaxial, half-metal

In this letter, we reported NiAl buffer layer as a template for the integration of epitaxial CPP-GMR devices on a Si(001) single crystalline substrate. By depositing NiAl on Si at an elevated temperature of 500{degree sign}C, a smooth and epitaxial B2-type NiAl(001) layer was obtained. The surface roughness was further improved by depositing Ag on the NiAl layer and applying subsequent annealing process. The epitaxial CPP-GMR devices grown on the buffered Si(001) substrate present a comparable large MR output with the devices grown on an MgO(001) substrate, demonstrating the possibility of epitaxial spintronic devices with NiAl template for practical applications.