[15a-C41-1~6] 10.3 GMR・TMR・磁気記録技術

▲ [15a-C41-3] Perpendicular magnetic tunnel junctions using ultra-thin strained MnGa electrode

〇Kazuya Suzuki¹、Reza Ranjbar¹、Jun Okabayashi²、Yoshio Miura³、Atsushi Sugihara¹、Hiroki Tsuchiura⁴、Shigemi Mizukami¹ (1.Tohoku Univ.WPI-AIMR、2.Univ. Tokyo RCS、3.Kyoto Inst. Tech.、4.Tohoku Univ.)

キーワード：Tunnel magnetoresistance, MnGa