[15a-C41-1~6] 10.3 Giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) and magnetic recording technologies

▲ [15a-C41-4] Perpendicular magnetic anisotropy of epitaxially grown Fe/Bi/MgO multilayer

〇Risa Miyakaze¹, Kouhei Nawaoka¹, Kazuhito Tanaka¹, Minoru Goto¹, Yoshishige Suzuki¹, Shinji Miwa¹ (1.Osaka Univ.)

Keywords:interfacial magnetic anisotropy, Bi

It is important problem for the practical use of random access memory which use magnetoresistive element consist of nanomagnets to control magnetization direction. Magnetization reversal by using voltage controlled magnetization anisotropy (VCMA) in ferromagnetic metals | MgO interface can realize low power consumption. In this study, we employed bi to enhance voltage controlled magnetic anisotropy. Bi has large spin orbit interaction. In this presentation, crystal structure of Bi characterizzed by RHEED and x-ray diffraction and its perpendicular magnetic anisotropycharacterized by magneto-optical Kerr effect will be discussed in detail.