[15a-P11-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15a-P11-1] Lattice relaxation mechanism during the growth of InGaAs/InAs/GaAs(111)A

〇Takaaki Mano¹, Kazutaka Mitsuishi¹, Akihiro Ohtake¹, Neul Ha¹, Andrea Castellano^1,2, Stefano Sanguinetti², Takeshi Noda¹, Yoshiki Sakuma¹, Takashi Kuroda¹, Kazuaki Sakoda¹ (1.NIMS, 2.Univ. Milano BIcocca)

Keywords:InGaAs, Metamorphic, X ray diffruction

We have reported that high quality metamorhic InGaAs can be formed on GaAs (111)A by using thin InAs interlayer. In this presentation, we discuss the mechanism of strain relaxation by using the InAs interlayer. The residual strain in the InGaAs can be minimized by adjusting the in-plane lattice spacing of the thin InAs interlayer to that of the growing InGaAs on top by tuning the thickness of InAs. However, even when the InAs thickness is not optimized, the thin InAs interlayer is elastically deformed by growing InGaAs on top together with the dislocation density change at the InAs/GaAs interface.