Influence of GaAs capping process on InAs-QDs grown using As<sub>2 </sub>molecular

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 15, 2016 9:30 AM - 11:30 AM P11 (Exhibition Hall)

9:30 AM - 11:30 AM

〇yuma hayashi¹, Nobuhiko Ozaki¹, Shunsuke Ohkouchi², Naoki Ikeda³, Yoshimasa Sugimoto³ (1.Wakayama Univ., 2.NEC, 3.NIMS)

Keywords:InAs Quantum dots, As2 molecular