Unique PL characteristics of high Bi content in GaAs<sub>1-x</sub>Bi<sub>x</sub>

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Thu. Sep 15, 2016 9:30 AM - 11:30 AM P11 (Exhibition Hall)

9:30 AM - 11:30 AM

〇Yusuke Shibata¹, Hideki Kuruma¹, Ryo Yoshioka¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

Keywords:GaAsBi