[15a-P6-1~6] 3.13 Semiconductor optical devices

[15a-P6-1] InGaAs-InGaAsN multiple quantum wells for broad band width SLD for optical sensing

〇Yuga Imamura¹, Masaya Kamikado¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:InGaAsN, optical sensing

In recent years, optical sensing technology has been expected to be applied in various fields. In the medical field, 1micron band broad spectrum light source is used as high resolution and avoid absorption of water. We newly introduced InGaAs and InGaAsN multiple quantum well structure to expand the gain band width of SLD and confirmed extended PL wavelength span of 145 nm.