9:30 AM - 11:30 AM
[15a-P6-6] Improve of dark current characteristics of CMOS APD by circle layout
Keywords:Avalanche Photo Diode, CMOS image sensor
CMOS APD has high-sensitivity, high-speed properties.
We have been fabricated CMOS APD with a square-type layout.
But the dark current was increased at the corner of the layout at high voltage.
So we propose circle-type layout for reducing dark current at the corner.
In this time, we fabricated CMOS APD with circle-type layout and measured these dark current characteristics.
In this result, the dark current was reduced by the circle-type layout.
We have been fabricated CMOS APD with a square-type layout.
But the dark current was increased at the corner of the layout at high voltage.
So we propose circle-type layout for reducing dark current at the corner.
In this time, we fabricated CMOS APD with circle-type layout and measured these dark current characteristics.
In this result, the dark current was reduced by the circle-type layout.