The 77th JSAP Autumn Meeting, 2016

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Symposium (Oral)

Symposium » Materials Science and Advanced Elecronics Created by Singularity of Nitride Semiconductots

[15p-A21-1~13] Materials Science and Advanced Elecronics Created by Singularity of Nitride Semiconductots

Thu. Sep 15, 2016 1:15 PM - 6:15 PM A21 (Main Hall A)

Yoshinao Kumagai(TUAT), Hideto Miyake(Mie Univ.), Yoichi Kawakami(Kyoto Univ.)

5:45 PM - 6:15 PM

[15p-A21-13] Growth of GaN-Based Nanowires by Several Methods and Their Device Applications

〇Hiroshi Amano2,3,4, Tatsuya Hattori1, Kaddour Lekhal2, Si-Young Bae2 (1.ECS, Nagoya Univ, 2.IMaSS, Nagoya Univ., 3.VBL, Nagoya Univ., 4.ARC, Nagoya Univ.)

Keywords:GaN Nanowire, Growth method

Growth and properties of GaN-based nanowire grown by MBE, MOVPE, and HVPE and their device applications will be diccussed.