The 77th JSAP Autumn Meeting, 2016

Presentation information

Print

Symposium (Oral)

Symposium » Materials Science and Advanced Elecronics Created by Singularity of Nitride Semiconductots

[15p-A21-1~13] Materials Science and Advanced Elecronics Created by Singularity of Nitride Semiconductots

Thu. Sep 15, 2016 1:15 PM - 6:15 PM A21 (Main Hall A)

Yoshinao Kumagai(TUAT), Hideto Miyake(Mie Univ.), Yoichi Kawakami(Kyoto Univ.)

2:15 PM - 2:30 PM

△ [15p-A21-4] Composition pulling effect near lattice-matching condition in InGaN films grown on ScAlMgO4(0001) substrates

〇(D)Takuya Ozaki1, Mitsuru Funato1, Yoichi Kawakami1 (1.Kyoto Univ.)

Keywords:Nitride semiconductors, InGaN, ScAlMgO4

One of the main issues on InGaN-based light emitters is large lattice mismatch between InGaN and GaN in the longer wavelength region. ScAlMgO4(SCAM) is a candidate substrate to solve it because it can realize the lattice matching with In0.17Ga0.83N. In-rich InGaN grown on strain-free In0.17Ga0.83N/SCAM templates have smaller lattice mismatch than conventional device structures. In our study, the composition pulling effect in InGaN/SCAM films is demonstrated.