The 77th JSAP Autumn Meeting, 2016

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Symposium (Oral)

Symposium » Materials Science and Advanced Elecronics Created by Singularity of Nitride Semiconductots

[15p-A21-1~13] Materials Science and Advanced Elecronics Created by Singularity of Nitride Semiconductots

Thu. Sep 15, 2016 1:15 PM - 6:15 PM A21 (Main Hall A)

Yoshinao Kumagai(TUAT), Hideto Miyake(Mie Univ.), Yoichi Kawakami(Kyoto Univ.)

4:15 PM - 4:30 PM

[15p-A21-9] Evaluation of Spontaneous Polarization on m-plane GaN by Terahertz Emission

Yuji Sakai1, 〇Iwao Kawayama1, Hidetoshi Nakanishi2, Masayoshi Tonouchi1 (1.Osaka Univ., 2.SCREEN)

Keywords:GaN, terahertz, polarization

We measured m-plane GaN surfaces using laser terahertz emission microscopy (LTEM) with an ultraviolet femtosecond laser and found an angle depedence of THz emission due to spontaneous polarization along c direction. The present results suggest that LTEM is capable of detecting not only radiative defects but also the local surface potential and non-radiative defects that cannot be observed with PL measurements.