[15p-A22-1~17] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15p-A22-3] Dependence of photoinduced top-gate effect in a-InGaZnO TFTs on a-InGaZnO thickness

〇Kazushige Takechi¹, Hiroshi Tanabe¹ (1.NLT Technologies)

Keywords:oxide semiconductor, thin-film transistor, photoinduced top-gate effect

We found that the photoinduced (blue LED) top-gate effect in bottom-gate type a-InGaZnO TFTs depends on the thickness of a-InGaZnO layer as well as the magnitude of negative Vtg. This specific feature of a-InGaZnO TFTs is interesting from the viewpoints of not only TFT application to a photosensor but also device physics.