[15p-A24-1~10] Materials and Physics of Solar-Hydrogen Production Catalysts

[15p-A24-7] Carrier Transfer Model and Physics of Semiconductor-Electrolyte Interface at Water Oxidation using n-type GaN Single Crystal

〇Katsushi Fujii^1,2,3, Kayo Koike², Takenari Goto³ (1.Univ. Kitakyushu, 2.Univ. Tokyo, 3.RIKEN)

Keywords:photoelectrochemical reaction, n-type GaN, water splitting oxygen evolution

Carrier transfer and reaction mechanisms at the interface of a semiconductor and an electrolyte of photoelectrochemical water oxidation reaction using n-type semiconductor is believed to relate to intermediate states at the semiconductor surface. In this report, the properties of this intermediate state of n-type GaN is investigated using with photoluminescence (PL) method.