[15p-A26-1~8] 13.7 Nano structures and quantum phenomena

[15p-A26-3] Effects of growth temperature of barrier layers integrated with InGaAs quantum dots on spin-transport properties

〇Kodai Itabashi¹, Kazuki Takeishi¹, Masayuki Urabe¹, Junichi Takayama¹, Shula Chen², Akihiro Murayama¹ (1.Hokkaido Univ., 2.Linkoping Univ.)

Keywords:semiconductor quantum dot, spin transport