[15p-A26-1~8] 13.7 ナノ構造・量子現象

▲ [15p-A26-6] Effect of coupling of a few donor-atoms as a quantum dot for single-electron tunneling operation at room temperature

〇Daniel Ioan Moraru¹、Arup Samanta¹、Tarik Hasan¹、Manoharan Muruganathan²、Hiroshi Mizuta^2,3、Michiharu Tabe¹ (1.RIE, Shizuoka Univ.、2.JAIST、3.Univ. Southampton)

キーワード：silicon nano-FET, coupled donor-atoms, single-electron tunneling

Dopant-atom transistors offer the ability to control carrier transport to the level of single atoms and single electrons. However, typical dopants in Si (such as P) have small barrier height and cannot sustain tunneling operation at practical temperatures. Here, we discuss an alternative of using strongly-coupled a few donors to form quantum dots (QDs) with larger barriers, allowing tunneling operation at room temperature.