[15p-A26-1~8] 13.7 Nano structures and quantum phenomena

[15p-A26-8] Electrical conduction of InAs quantum dot grown on InP(311)B substrate

〇Naoki Wada¹, Ya Zhang¹, Kenji Yoshida¹, Kouichi Akahane², Kazuhiko Hirakawa^1,3 (1.IIS, 2.NICT, 3.INQIE)

Keywords:Quantum dot, Single electron transistor

Self-assembled InAs quantum dots(QDs) grown on GaAs substrates have been intensively studied. However, during the growth, intermixing of In and Ga atoms occurs and QD shows low conductance. To avoid this problem, we grew InAs QDs on InP(311)B substrate and evaluated its electrical conduction characteristics as a single electron transistor.