[15p-A34-1~19] 13.10 Compound solar cells

[15p-A34-13] Surface cleaning of GaAs substrate separated by epitaxial lift-off technique

〇Daiki Kimura^1,2, Naoya Miyashita¹, Kentaroh Watanabe¹, Hassanet Sodabanlu¹, Tetsuya Nakata^1,2, Masakazu Sugiyama², Yoshitaka Okada^1,2 (1.RCAST, The Univ. of Tokyo, 2.School of Engineering, The Univ. of Tokyo)

Keywords:Epitaxial lift-off

This work focuses on the surface cleaning of GaAs Surface cleaning of GaAs
substrate which is prepared by epitaxial lift-off technique to release its
device layer. The surface morphologies and roughnesses were characterized
by atomic force microscopy. Effect of the selective etching on the surface
morphologies was studied.