[15p-B4-1~8] CS.5 3.11&13.7 Code-sharing session

[15p-B4-5] Robustness characterization of quantum-dot entangled photon source

〇Takashi Kuroda¹, Takaaki Mano¹, Neul Ha¹, Xiangming Liu¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (1.NIMS)

Keywords:quantum dot, quantum entangled photon pair

Semiconductor quantum dots (QD) are expected to serve as the efficient source of quantum entangled photons. A prerequisite for this source is the removal of structural anisotropy. Recently, we have proposed the use of a C3v symmetric (111)A substrate to achieve naturally symmetric dots with droplet epitaxy. Success probability of finding ideal dot reaches 5% for GaAs dots on AlGaAs(111)A [1] and 2% for InAs dots on InP(111)A [2], which implies a prospect of actually using QD as the quantum light device. Here we study the robustness characterization of this source against practical environment parameters. We measured the degree of quantum entanglement and luminescence degree of polarization in perfectly isotropic GaAs dots (free from anisotropic fine structure splitting; FSS).
[1] Phys. Rev. B 88, 041306(R) (2013); [2] Phys. Rev. B 90, 081301(R) (2014).