[15p-B5-1~19] 7.2 Applications and technologies of electron beams

[15p-B5-17] Photo-conversion characteristics of CdTe/CdS diode before/after gamma-ray irradiation

〇Tomoaki Masuzawa¹, Yoichiro Neo¹, Yasuhito Gotoh², Tamotsu Okamoto³, Masayoshi Nagao⁴, Nobuhiro Sato², Masafumi Akiyoshi⁵, Ikuji Takagi², Hidenori Mimura¹ (1.Shizuoka Univ., 2.Kyoto Univ., 3.National Inst. of Technol., Kisarazu College, 4.AIST, 5.Osaka Prefecture Univ.)

Keywords:radiation tolerant, imaging device, field emitter array (FEA)

In this study, radiation tolerance of CdTe/CdS diode has been evaluated in order to develop a radiation-torelant portable imaging device. A p-n diode made of thin-film CdTe/CdS was fabricated and was irradiated by gamma-ray from Co-60 source. The diode was then built in a prototype camera device and was driven as a photo-converter. The result showed that irradiation of 1MGy gamma-ray does not cause significant degradation of the imaging device.