[15p-B8-1~14] CS.3 3.14光制御デバイス・光ファイバー，3.15シリコンフォトニクスのコードシェアセッション

▼ [15p-B8-1] Ge Passive Waveguide Components on Ge-on-Insulator Wafer for Mid-Infrared Integrated Photonics

〇(DC)Jian Kang^1,2、Mitsuru Takenaka^1,2、Shinichi Takagi^1,2 (1.Tokyo Univ.、2.JST-CREST)

キーワード：Photonic integrated circuits, Mid-infrared, Ge-on-insulator

Mid-infrared (MIR) photonics has attracted a lot of interests in sensing and optical communications. At MIR wavelengths from 2 to 14 μm, Ge is very promising by showing high transparency and many attractive optical properties. Taking advantage of the useful features of Ge at MIR wavelengths, we have previously proposed a Ge waveguide platform on a Ge-on-insulator (GeOI) wafer for MIR photonic integration. In this work, we present the design and characterization of several fundamental Ge passive waveguide components at 2-μm band on the GeOI wafer, including a single-mode waveguide, a grating coupler, a multimode interferometer and a micro-ring based on Ge strip waveguide.